Analysis and improvement of self-heating effect based on GaN HEMT devices
نویسندگان
چکیده
Abstract Gallium nitride high electron mobility transistor (GaN HEMT) applications in high-power and high-frequency environments can lead to device temperatures due the self-heating effect, thus limiting performance reliability. In order address this problem, paper changes material structure of device. It successfully reduces maximum temperature 335 K by using a new diamond substrate, heat sink layer, InGaN insertion layer. Simulation results show that has 35% reduction temperature, 61% increase current, 37% improvement transconductance, current collapse. At same time, also improves channel.
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ژورنال
عنوان ژورنال: Materials research express
سال: 2022
ISSN: ['2053-1591']
DOI: https://doi.org/10.1088/2053-1591/ac82a8